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PDF TGA4801 Data sheet ( Hoja de datos )
| Número de pieza | TGA4801 | |
| Descripción | DC - 35 GHz Medium Power Amplifier with AGC | |
| Fabricantes | TriQuint Semiconductor | |
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TGA4801
DC – 35 GHz MPA with AGC
Description
The TriQuint TGA4801 is a medium power wideband
AGC amplifier that typically provides 10dB saturated
midband gain with 6dB AGC range. Typical input and
output return loss is >10dB. Typical Noise Figure is 2.5dB
at 6GHz. Typical saturated output power is 24dBm at
20GHz. Small signal 3dB BW is 25GHz with saturated
power performance to 35GHz. RF ports are DC coupled
enabling the user to customize system corner
frequencies.
The TGA4801 is an excellent choice for 43Gb/s NRZ
applications. The TGA4801 is capable of driving a
Lithium Niobate Optical Modulator with electrical Non-
Return-to-Zero (NRZ) data.
Drain bias may be applied thru the output port for best
efficiency or thru the on-chip drain termination. A
cascade consisting of three TGA4803’s followed by a
TGA4801 demonstrated greater than 7V(amplitude)
output voltage swing with 350mV at the input when
stimulated with 43GB/s 2^31-1 PRBS NRZ data. Output
eye patterns shown to the right.
The TGA4801 requires off-chip decoupling and blocking
components. Each device is 100% DC and RF tested on-
wafer to ensure performance compliance. The device is
available in chip form.
Lead-free and RoHS compliant
Key Features and Performance
• 0.25um pHEMT Technology
• DC - 23GHz Linear BW
• DC - 35GHz Saturated Power BW
• 14dB Small Signal Gain
• 10ps Edge Rates (20/80)
• 7Vpp 43Gb/s NRZ PRBS
• Amplitude and Symmetry Control
• Chip Dimensions 3.3mm x 2.0mm
Primary Applications:
• 43Gb/s NRZ Modulator Driver
Measured Data:
40Gb/s NRZ 2^31-1 PRBS
www.DataSheet.net/
26Gb/s NRZ 2^31-1 PRBS
Datasheet subject to change without notice
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2009 © Rev -
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
1800pF 0.1uF (2pl)
TGA4801
V+
Vctl
0.01uF
4
2
RF in
TGA4801
1
7
RFout and Vd
Vtee
5
Note: Drain bias must be applied at Vd
(pin 5) thru broadband bias tee for best
efficiency.
Bypass caps must remain on Pin 4
1800pF
0.1uF (2pl)
www.DataSheet.net/
Vg
Bias Procedure:
1. Make sure no RF power is applied to the device before continuing.
2. Pinch off device by setting Vg to –1.5V.
3. Raise Vd to 6.5V while monitoring drain current. Current should be zero.
4. Raise Vctl to 1V (no greater than 2.5V).
5. Adjust Vg more positive until drain current reaches 160mA.
6. Apply Vin=2.5Vpp 40Gb/s NRZ 2^31-1 PRBS.
7. Adjust Vctl for amplitude and Vg for symmetry.
Note:
1. Assure Vctl never exceeds Vd during bias up and down sequences. Also,
assure Vctl never exceeds 2.5V during normal operation.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected]
May 2009 © Rev -
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TGA4801.PDF ] | |
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