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TGA4516-TS fiches techniques PDF

TriQuint Semiconductor - Ka-Band 2W Power Amplifier

Numéro de référence TGA4516-TS
Description Ka-Band 2W Power Amplifier
Fabricant TriQuint Semiconductor 
Logo TriQuint Semiconductor 





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TGA4516-TS fiche technique
Ka-Band 2W Power Amplifier
TGA4516-TS
Key Features
30 - 40 GHz Bandwidth
> 33 dBm Nominal Psat @ Pin = 20dBm
18 dB Nominal Gain
Bias: 6 V, 1050 mA Idq (1.9A under RF Drive)
0.15 um 3MI MMW pHEMT Technology
Thermal Spreader Dimensions:
2.921 x 2.438 mm
Primary Applications
Military Radar Systems
Ka-Band Sat-Com
Point to Point Radio
Product Description
The TriQuint TGA4516 is a High Power MMIC Amplifier
for Ka-band applications. The part is designed using
TriQuint’s 0.15um power pHEMT process and is
soldered to a CuMo thermal spreader. The small chip
size is achieved by utilizing TriQuint’s 3 metal layer
interconnect (3MI) design technology that allows
compaction of the design over competing products.
The TGA4516 provides >33 dBm saturated output
power, and has typical gain of 18 dB at a bias of 6V and
1050mA (Idq). The current rises to 1.9A under RF drive.
This HPA is ideally suited for many applications such as
Military Radar Systems, Ka-band Sat-Com, and Point-
to-Point Radios.
The TGA4516 is 100% DC and RF tested on-wafer to
ensure performance compliance.
Lead-Free & RoHS compliant.
Datasheet subject to change without notice.
www.DataSheet.net/
25
20
15
10
5
0
-5
-10
-15
-20
-25
30
35
34
33
32
31
30
30
Fixtured Data
VD = 6V, ID = 1050mA
S21
S22
S11
32 34 36
Frequency (GHz)
Pout @ Pin =20dBm
38
40
32 34 36 38 40
Frequency (GHz)
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 [email protected]
November 2011 © Rev C
1
Datasheet pdf - http://www.DataSheet4U.co.kr/

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