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PDF TGA4509 Data sheet ( Hoja de datos )
| Número de pieza | TGA4509 | |
| Descripción | 27 - 31 GHz 1W Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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27 - 31 GHz 1W Power Amplifier
Product Data Sheet
August 5, 2008
TGA4509
Key Features
• 22 dB Nominal Gain @ 30 GHz
• 30 dBm Nominal Pout @ P1dB
• 25% PAE @ P1dB
• -10 dB Nominal Return Loss
• Built-in Power Detector
• 0.25-µm mmW pHEMT 3MI
• Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA
• Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm
(0.096 x 0.045 x 0.004 in)
Primary Applications
• Point to Point Radio
• Point to Multi-point Radio
• LMDS
• Satellite Ground Terminal
Fixtured Measured Performance
Data taken
@ 30 GHz
Bias Conditions: Vd = 6 V, Id =420 mA
30
www.DataSheet.net/
25
20
15 S21
10
5
0
-5
-10
-15
-20 S22
S11
-25
-30
25 26 27 28 29 30 31 32 33
Frequency (GHz)
32
30
28
26
24 Pout
22
20 Gain
18
16 IDS
14
12
10
-12 -9 -6 -3
0
3
6
9 12 15 18
Pin (dBm)
Note: Datasheet is subject to change without notice.
34
1000
800
600
400
200
0
21
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
1 page  
Vg (optional)
0.01 μF
Product Data Sheet
August 5, 2008
TGA4509
Recommended Assembly Diagram
Vd
0.01 μF
Reference
Diode
100pF
100pF
0.01μF DQ
cap
(opt.)
Input
TFN
Output
TFN
100pF
0.01 μF
www.DataSheet.net/
100pF
0.01 μF
Vd (optional)
Power
Detector
Vg
Notes:
1. Connection to power det, ref diode shown.
2. 1 μF cap on gate & drain power supplies are lines required.
3. Gate voltage can either be from one side or both sides.
4. Drain voltage is required from both sides for Id > 650 mA.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
5
Datasheet pdf - http://www.DataSheet4U.co.kr/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGA4509.PDF ] | |
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