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FTP06N65 Datasheet دیتاشیت PDF دانلود

دیتاشیت - IPS - N-Channel MOSFET

شماره قطعه FTP06N65
شرح مفصل N-Channel MOSFET
تولید کننده IPS 
آرم IPS 


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FTP06N65 شرح
N-Channel MOSFET
Applications:
• Adaptor
• LCD Panel Power
Features:
• Lead Free
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP06N65
FTA06N65
PACKAGE
TO-220
TO-220F
BRAND
FTP06N65
FTA06N65
FTP06N65
FTA06N65
VDSS
650V
RDS(ON) (Max.)
1.25
ID
6.0A
G DS
TO-220
Not to Scale
G DS
TO-220F
Not to Scale
G
D
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP06N65 FTA06N65
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
www.DataSheet.net/
(NOTE *2)
650
6.0 6.0*
Figure 3
Figure 6
125 31
1.00 0.25
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=16.6 mH, ID=6.2 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
320
Figure 8
3.0
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
Units
V
A
W
W/ oC
V
mJ
V/ ns
oC
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
FTP06N65 FTA06N65
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
1.0
62
4.0
62
©2006 InPower Semiconductor Co., Ltd.
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
FTP06N65/FTA06N65 REV. A April. 2006
Datasheet pdf - http://www.DataSheet4U.co.kr/

قانون اساسیصفحه 9
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