PDF T1G4005528-FS Data sheet ( Hoja de datos )

Número de pieza	T1G4005528-FS
Descripción	GaN RF Power Transistor
Fabricantes	TriQuint Semiconductor
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No Preview Available ! T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features • Frequency: DC to 3.5 GHz • Linear Gain: >15 dB at 3.5 GHz • Operating Voltage: 28 V • Output Power (P3dB): 55 W at 3.5 GHz • Lead-free and RoHS compliant Functional Block Diagram 1 1.524 www.DataSheet.net/ General Description The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. 5.4261 Pin Configurations Pin # Symbol 1 RF Output 2 RF Input 9.652 Flange Source 3.505 +.000 -.203 Ordering Information Material No. Part No. 1078974 T1G4005528- FS 1079752 T1G4005528- FS-EVB1 Description Packaged part: Flangeless 3.0-3.5 GHz Eval Brd ECCN EAR99 EAR99 Datasheet: Rev D 8/10/2011 © 2011 TriQuint Semiconductor, Inc. –1– Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® Datasheet pdf - http://www.DataSheet4U.co.kr/ 1 page T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor S-Parameter Data (VDS = 28V, IDQ = 200 mA) Freq. [GHz] Real S11 Imag S11 Real S21 Imag S21 0.1 -0.726 -0.670 -7.178 16.533 0.2 -0.928 -0.342 -1.516 9.124 0.3 -0.950 -0.211 0.151 5.909 0.4 -0.954 -0.146 0.725 4.321 0.5 -0.964 -0.110 0.934 3.517 0.6 -0.974 -0.089 0.969 3.088 0.7 -0.977 -0.069 0.985 2.697 0.8 -0.974 -0.049 1.010 2.306 0.9 -0.971 -0.030 1.042 1.952 1.0 -0.969 -0.013 1.074 1.667 1.1 -0.968 0.001 1.100 1.443 1.2 -0.969 0.014 1.113 1.268 1.3 -0.970 0.025 1.104 1.129 1.4 -0.971 0.035 1.070 1.014 1.5 -0.972 0.044 1.023 0.915 1.6 -0.971 0.054 0.976 0.826 1.7 -0.970 0.064 0.945 0.742 1.8 -0.968 0.075 0.940 0.656 1.9 -0.964 0.087 0.957 0.571 www.DataSheet.net/ 2.0 -0.961 0.099 0.984 0.488 2.1 -0.956 0.111 1.013 0.409 2.2 -0.952 0.122 1.035 0.336 2.3 -0.948 0.132 1.042 0.271 2.4 -0.944 0.141 1.039 0.209 2.5 -0.939 0.149 1.036 0.145 2.6 -0.934 0.158 1.039 0.076 2.7 -0.927 0.167 1.056 -0.006 2.8 -0.916 0.177 1.087 -0.105 2.9 -0.900 0.186 1.131 -0.227 3.0 -0.876 0.192 1.186 -0.379 3.1 -0.847 0.197 1.231 -0.564 3.2 -0.828 0.196 1.188 -0.773 3.3 -0.814 0.185 1.066 -0.990 3.4 -0.804 0.161 0.856 -1.189 3.5 -0.801 0.124 0.533 -1.341 3.6 -0.812 0.081 0.110 -1.392 3.7 -0.843 0.056 -0.258 -1.240 3.8 -0.879 0.058 -0.436 -0.975 3.9 -0.910 0.072 -0.467 -0.749 4.0 -0.933 0.089 -0.454 -0.571 Real S12 0.007 0.008 0.008 0.008 0.008 0.008 0.008 0.008 0.008 0.007 0.007 0.007 0.007 0.007 0.006 0.006 0.006 0.006 0.006 0.006 0.006 0.006 0.006 0.006 0.006 0.005 0.005 0.005 0.005 0.005 0.004 0.003 0.001 -0.001 -0.004 -0.006 -0.008 -0.008 -0.007 -0.006 Imag S12 0.003 0.002 0.001 0.000 0.000 -0.001 -0.001 -0.001 -0.001 -0.001 -0.001 -0.002 -0.002 -0.002 -0.002 -0.002 -0.002 -0.002 -0.002 -0.002 -0.002 -0.003 -0.003 -0.003 -0.003 -0.004 -0.004 -0.005 -0.005 -0.006 -0.008 -0.009 -0.009 -0.009 -0.009 -0.007 -0.004 -0.001 0.000 0.001 Real S22 -0.451 -0.538 -0.585 -0.605 -0.609 -0.610 -0.616 -0.628 -0.643 -0.658 -0.673 -0.688 -0.704 -0.718 -0.733 -0.746 -0.759 -0.770 -0.780 -0.790 -0.800 -0.811 -0.825 -0.839 -0.853 -0.866 -0.878 -0.888 -0.898 -0.909 -0.921 -0.938 -0.958 -0.974 -0.983 -0.979 -0.962 -0.949 -0.940 -0.934 Imag S22 -0.049 -0.035 -0.047 -0.067 -0.088 -0.105 -0.115 -0.120 -0.126 -0.136 -0.147 -0.157 -0.161 -0.156 -0.145 -0.134 -0.126 -0.124 -0.128 -0.133 -0.138 -0.139 -0.134 -0.126 -0.117 -0.109 -0.103 -0.099 -0.095 -0.087 -0.076 -0.062 -0.045 -0.025 0.003 0.037 0.063 0.078 0.089 0.096 Datasheet: Rev D 8/10/2011 © 2011 TriQuint Semiconductor, Inc. –5– Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® Datasheet pdf - http://www.DataSheet4U.co.kr/ 5 Page T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Evaluation Board Information (Continued) T1G4005528-FS-EVB1, 3.0 to 3.5 GHz GATE DRAIN C6 C5 C4 C3 C13 R1 C10 C11 C12 C9 C8 50 Ohm SMA_1 C1 C2 L1 3 12 "IMN" FET1 L2 "T1G4005528-FS" D3 1G D2 12 G S3 S "OMN" www.DataSheet.net/ 50 Ohm C7 SMA_2 Bias-up Procedure Set gate voltage (Vg) to -5.0 V Set drain voltage (Vd) to 28 V Slowly increase Vg until quiescent Id is 200 mA. Typical Vg is -3.5 V Apply RF signal Bias-down Procedure Turn off RF signal Turn off Vd and wait 1 second to allow drain capacitor(s) to dissipate Turn off Vg Datasheet: Rev D 8/10/2011 © 2011 TriQuint Semiconductor, Inc. – 11 – Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® Datasheet pdf - http://www.DataSheet4U.co.kr/ 11 Page

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