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PDF 2N5087 Data sheet ( Hoja de datos )
| Número de pieza | 2N5087 | |
| Descripción | Amplifier Transistor(PNP Silicon) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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2N5087
Preferred Device
Amplifier Transistor
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
50 Vdc
50 Vdc
3.0 Vdc
50 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
3 COLLECTOR
2
BASE
1 EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
1
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
5087
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 4
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
2N5087
TO−92
5000 Units / Bulk
2N5087G
TO−92
5000 Units / Bulk
(Pb−Free)
2N5087RLRAG TO−92 2000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5087/D
1 page  
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
1000
700
500
300
200
VCC = − 3.0 V
IC/IB = 10
ts
IB1 = IB2
TJ = 25°C
td @ VBE(off) = 0.5 V
tr
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 11. Turn−On Time
50 70 100
100
70
50
tf
30
20
10
−1.0
− 2.0 − 3.0 − 5.0 − 7.0 −10 − 20 − 30
IC, COLLECTOR CURRENT (mA)
Figure 12. Turn−Off Time
− 50 − 70 −100
500
TJ = 25°C
300 VCE = 20 V
5.0 V
200
100
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
Figure 13. Current−Gain — Bandwidth Product
10
TJ = 25°C
7.0
Cib
5.0
3.0
2.0 Cob
1.0
0.05 0.1
0.2 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 14. Capacitance
20
50
20
VCE = −10 Vdc
10 f = 1.0 kHz
7.0 TA = 25°C
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance
50 100
200
VCE = 10 Vdc
100 f = 1.0 kHz
70 TA = 25°C
50
30
20
10
7.0
5.0
3.0
2.0
0.1
0.2
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. Output Admittance
50 100
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 2N5087.PDF ] | |
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