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Numéro de référence | 2SC4490 | ||
Description | PNP/NPN Epitaxial Planar Silicon Transistors | ||
Fabricant | Sanyo Semicon Device | ||
Logo | |||
Ordering number:EN3097
Features
· High breakdown voltage (VCEO≥300V).
· Excellent high frequency characteristic.
· Adoption of MBIT process.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1710/2SC4490
High-Definition CRT Display
Video Output Applications
Package Dimensions
unit:mm
2064
[2SA1710/2SC4490]
( ) : 2SA1710
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
Cob
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
VCB=(–)30V, f=1MHz
E : Emitter
C : Collector
B : Base
SANYO : NMP
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ
70*
70
(3.1)
2.6
max
(–)100
(–)100
280*
(–)0.6
(–)1.0
Unit
nA
nA
MHz
V
V
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/5169MO, TS No.3097–1/5
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Pages | Pages 5 | ||
Télécharger | [ 2SC4490 ] |
No | Description détaillée | Fabricant |
2SC4490 | PNP/NPN Epitaxial Planar Silicon Transistors | Sanyo Semicon Device |
2SC4490 | (2SCxxxx) High Definition CRT Display USE | Sanyo |
2SC4491 | NPN Epitaxial Planar Silicon Transistor | Sanyo Semicon Device |
2SC4492 | NPN Triple Diffused Planar Silicon Transistor | Sanyo Semicon Device |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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