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PDF 2SC4420 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4420 | |
| Descripción | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC4420
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
900
900
800
7
5
3
1
70
3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
2.0±0.1
0.6±0.2
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 900V, IE = 0
VEB = 7V, IC = 0
50 µA
50 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
800
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.8A
8
6
Collector to emitter saturation voltage VCE(sat)
IC = 0.8A, IB = 0.16A
1.5 V
Base to emitter saturation voltage VBE(sat)
IC = 0.8A, IB = 0.16A
1.5 V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCE = 5V, IC = 0.15A, f = 1MHz
ton
IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A,
tstg
VCC = 250V
tf
10 MHz
0.7 µs
2.5 µs
0.3 µs
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC4420.PDF ] | |
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