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PDF 2SC4408 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4408 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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1. 2SC4408  Hay una vista previa y un enlace de descarga de 2SC4408 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4408
Power Amplifier Applications
Power Switching Applications
2SC4408
Unit: mm
• Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
• High collector power dissipation: PC = 900 mW
• High-speed switching: tstg = 500 ns (typ.)
• Complementary to 2SA1680
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
80
50
6
2
0.2
900
150
−55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92MOD
―
2-5J1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.36 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-10
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4408.PDF ] | |
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