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SCS411SDF fiches techniques PDF

SeCoS - Schottky Barrier Diode

Numéro de référence SCS411SDF
Description Schottky Barrier Diode
Fabricant SeCoS 
Logo SeCoS 





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SCS411SDF fiche technique
Elektronische Bauelemente
SCS411SDF
VOLTAGE 40 V, 0.5 A
Small Signal Schottky Barrier Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-323
DESCRIPTION
The SCS411SDF is designed for low power rectification.
MARKING: 05T
K
3
05T
12
A NC
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.15 1.35
0.80 1.10
1.20 1.40
0.20 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.25
--
0.650 TYP.
MAXIMUM RATINGS(TA=25°C unless otherwise specified.)
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current at 8.3mSec Single Half Sine-Wave
Typical Junction Capacitance between Terminal 1
Maximum Average Forward Rectified Current
Total Power Dissipation
Junction & Storage Temperature
SYMBOL
VRRM
VRMS
VDC
IFSMwww.DataSheet.co.kr
CJ
IO
PD
TJ,TSTG
VALUE
40
28
20
3.0
20
0.5
225
125, -40~125
UNIT
V
V
V
A
pF
A
mW
°C
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise specified.)
PARAMETER
SYMBOL
MIN
Reverse Breakdown Voltage
Maximum Instantaneous Forward Voltage
V(BR)R
VF
40
-
-
Maximum Average Reverse Current
IR -
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 10 volts.
2. ESD sensitive product handling required.
MAX
-
300
500
30
UNIT
V
mV
mV
µA
TEST CONDITION
IR=100µA
IF1=10mA
IF2=500mA
VR=10V
http://www.SeCoSGmbH.com/
26-Nov-2009 Rev. A
Any changes of specification will not be informed individually.
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