DataSheetWiki


2SC4299 fiches techniques PDF

Sanken electric - Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Numéro de référence 2SC4299
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
Fabricant Sanken electric 
Logo Sanken electric 





1 Page

No Preview Available !





2SC4299 fiche technique
2SC4299
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4299
900
800
7
3(Pulse6)
1.5
70(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.3A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
250 250
1
10 –5 0.15
IB2
(A)
–0.5
ton
(µs)
1max
(Ta=25°C)
2SC4299
100max
100max
800min
10 to 30
0.5max
1.2max
6typ
50typ
Unit
µA
µA
V
V
V
MHz
pF
tstg
(µs)
5max
tf
(µs)
1max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
500mA
3
400mA
300mA
200mA
2
100mA
1 IB=50mA
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
0
0.02
VCE(sat)
(
–55˚C
125˚C
0.05 0.1
0.5 1
Collector Current IC(A)
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50
125˚C
(VCE=4V)
25˚C
–55˚C
10
5
0.01
0.05 0.1
0.5
Collector Current IC(A)
1
3
t on• t stg• t f– I C Characteristics (Typical)
8
5
VCC 250V
IC:IB1:–IB2
=2:0.3:1 Const.
tstg
1
0.5
0.2
0.1
tf
ton
0.5 1
Collector Current IC(A)
3
θ j-a– t Characteristics
3
1
0.5
0.3
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5
100µs
1
0.5
Without Heatsink
Natural Cooling
0.1
50
100 500
Collector-Emitter Voltage VCE(V)
1000
Reverse Bias Safe Operating Area
10
5
1
Without Heatsink
0.5 Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
0.1
50
100 500
Collector-Emitter Voltage VCE(V)
1000
Pc–Ta Derating
70
60
50
40
30
20
10
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
97

PagesPages 1
Télécharger [ 2SC4299 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC4291 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC4292 NPN triple diffused planar silicon transistor Sanyo
Sanyo
2SC4293 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC4293 Silicon NPN Transistor Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche