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Numéro de référence | 2SC4299 | ||
Description | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) | ||
Fabricant | Sanken electric | ||
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1 Page
2SC4299
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)
Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC4299
900
800
7
3(Pulse6)
1.5
70(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=800V
VEB=7V
IC=10mA
VCE=4V, IC=1A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCE=12V, IE=–0.3A
VCB=10V, f=1MHz
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
250 250
1
10 –5 0.15
IB2
(A)
–0.5
ton
(µs)
1max
(Ta=25°C)
2SC4299
100max
100max
800min
10 to 30
0.5max
1.2max
6typ
50typ
Unit
µA
µA
V
V
V
MHz
pF
tstg
(µs)
5max
tf
(µs)
1max
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Type No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
500mA
3
400mA
300mA
200mA
2
100mA
1 IB=50mA
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
3
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
0
0.02
VCE(sat)
(
–55˚C
125˚C
0.05 0.1
0.5 1
Collector Current IC(A)
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50
125˚C
(VCE=4V)
25˚C
–55˚C
10
5
0.01
0.05 0.1
0.5
Collector Current IC(A)
1
3
t on• t stg• t f– I C Characteristics (Typical)
8
5
VCC 250V
IC:IB1:–IB2
=2:0.3:1 Const.
tstg
1
0.5
0.2
0.1
tf
ton
0.5 1
Collector Current IC(A)
3
θ j-a– t Characteristics
3
1
0.5
0.3
1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
10
5
100µs
1
0.5
Without Heatsink
Natural Cooling
0.1
50
100 500
Collector-Emitter Voltage VCE(V)
1000
Reverse Bias Safe Operating Area
10
5
1
Without Heatsink
0.5 Natural Cooling
L=3mH
IB2=–1.0A
Duty:less than 1%
0.1
50
100 500
Collector-Emitter Voltage VCE(V)
1000
Pc–Ta Derating
70
60
50
40
30
20
10
Without Heatsink
3.5
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
97
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Pages | Pages 1 | ||
Télécharger | [ 2SC4299 ] |
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