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PDF FLL200IB-3 Data sheet ( Hoja de datos )
| Número de pieza | FLL200IB-3 | |
| Descripción | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FLL200IB-3 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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FLL200IB-1, FLL200IB-2, FLL200IB-3
L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB = 42.5dBm (Typ.)
• High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1)
• High PAE: ηadd = 34% (Typ.)
• Proven Reliability
• Hermetically Sealed Package
DESCRIPTION
The FLL200IB-1, FLL200IB-2, FLL200IB-3 are Power GaAs FETs that
are specifically designed to provide high power at L-Band frequencies
with gain, linearity and efficiency superior to that of silicon devices.
The performance in multitone environments for Class AB operation make
them ideally suited for base station applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
83.3 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:www.DataSheet.co.kr
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 53.6 and -11.6 mA respectively with
gate resistance of 25Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power
at 1dB G.C.P.
Power Gain
at 1dB G.C.P.
FLL200IB-1
FLL200IB-2
FLL200IB-3
FLL200IB-1
FLL200IB-2
FLL200IB-3
Drain Current
Power added Efficiency
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 4800mA
VDS = 5V, IDS = 480mA
IGS = -480µA
f=1.5GHz
f=2.3GHz
VDS = 10V
f=2.6GHz
IDS = 0.6 IDSS f=1.5GHz
(Typ.) f=2.3GHz
f=2.6GHz
VDS = 10V
IDS = 0.6 IDSS (Typ.)
Min.
-
-
-1.0
-5
41.5
12.0
10.0
10.0
-
-
Limit
Typ. Max.
8 12
4000 -
-2.0 -3.5
--
42.5 -
13.0 -
11.0 -
11.0 -
4.8 6.0
34 -
Unit
A
mS
V
V
dBm
dB
dB
dB
A
%
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Rth
∆Tch
Channel to Case
10V x Idsr x Rth
- 1.6 1.8
°C/W
- - 80
°C
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
FLL200IB-3
L-Band Medium & High Power GaAs FET
+j50
5.0
+j25
4.5
1.5GHz
5.0
4.5 2.5
4.0
+j10
1.5GHz
4.0 2.0
2.6
3.5
0
3.4
3.5
3.4
3.3 10
3.2
3.3
-j10 3.1 3.2
2.7
2.9
2.8
50Ω
2.3
2.7
2.6 2.5 3.0
2.9
3.1
2.0
2.1
2.2
100
2.8
3.0
-j25
-j50
+j100
+j250
250
-j250
-j100
S11 +90°
S22
8
S21
S12
6
2.8
4 2.9
2.7
2.6
3.5 2
180° 0.10
0.06
2.6
2.7 5.0
2.6
2.5 2.9
1.5GHz 3.0 0.06 0.10 0°
SCALE FOR |S21|
2.3 3.1
2.0
2.2 2.1
2.5 2.0
2.4
2.3
2.1
2.2
-90°
FREQUENCY
S11
(MHZ)
MAG ANG
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
.962 166.6
.933 144.9
.864 115.5
.548 64.6
.220 -111.2
.214 -85.0
.923 178.6
.953 150.4
.952 131.2
.953 113.9
S-PARAMETERS
VDS = 10V, IDS = 4800mA
S21 S12
MAG ANG
MAG ANG
1.649
1.143
1.368
2.320
3.742
4.634
.375
.065
.020
.008
63.2
30.0
-12.1www.DataSheet.co.kr
-75.5
-173.7
7.9
-118.7
-162.9
168.3
143.6
.007
.015
.031
.059
.051
.039
.017
.005
.001
.001
41.9
32.2
2.8
-50.7
-138.8
-126.8
117.2
84.4
75.2
63.7
S22
MAG ANG
.837 168.9
.798 156.2
.726 142.6
.526 137.3
.560 107.0
.782 -128.3
.898 166.5
.939 147.5
.951 133.4
.957 119.1
Download S-Parameters, click here
OUTPUT POWER vs. INPUT POWER
VDS=10V
IDS ≈ 0.6 IDSS
44 f = 2.6 GHz
42
Pout
40
38
ηadd
36
34
32
23 25 27 29 31 33
Input Power (dBm)
50
40
30
20
10
5
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FLL200IB-3.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FLL200IB-1 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | Eudyna Devices |
| FLL200IB-2 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | Eudyna Devices |
| FLL200IB-3 | (FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET | Eudyna Devices |
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