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2SC4247 fiches techniques PDF

Toshiba Semiconductor - Silicon NPN epitaxial planer Transistor

Numéro de référence 2SC4247
Description Silicon NPN epitaxial planer Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC4247 fiche technique
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC4247
TV Tuner, UHF Oscillator Applications
(common collector)
2SC4247
Unit: mm
· Transition frequency is high and dependent on current excellently.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
Rating
20
12
3
15
30
100
125
-55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Transition frequency
Output capacitance
Collector-base time constant
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
fT
Cob
Ccrbb’
VCB = 10 V, IE = 0
VEB = 2 V, IC = 0
IC = 1 mA, IB = 0
VCE = 10 V, IC = 5 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCB = 10 V, IC = 5 mA, f = 30 MHz
Min Typ. Max Unit
¾ ¾ 0.1 mA
¾ ¾ 1.0 mA
12 ¾ ¾
V
35 ¾ 130
2.6 4
¾ GHz
¾ 1.05 1.35 pF
¾ 4.5 9.0 ps
Marking
1 2003-03-19

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