DataSheetWiki


2SC4210 fiches techniques PDF

Toshiba Semiconductor - Silicon NPN Epitaxial Type TRANSISTOR

Numéro de référence 2SC4210
Description Silicon NPN Epitaxial Type TRANSISTOR
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





1 Page

No Preview Available !





2SC4210 fiche technique
2SC4210
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4210
Audio Power Amplifier Applications
High DC current gain: hFE = 100~320
Complementary to 2SA1621
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
35
30
5
800
160
200
150
55~150
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 1 V, IC = 700 mA
IC = 500 mA, IB = 20 mA
VCE = 1 V, IC = 10 mA
VCE = 5 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 100~200, Y: 160~320
Marking
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
30 ⎯ ⎯
V
100 320
35 ⎯ ⎯
⎯ ⎯ 0.5 V
0.5 0.8 V
120 MHz
13 pF
1 2007-11-01

PagesPages 3
Télécharger [ 2SC4210 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC4210 Silicon NPN Epitaxial Type TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor
2SC4210 Silicon NPN Epitaxial Kexin
Kexin
2SC4211 Transistor Sanyo
Sanyo
2SC4212 Silicon NPN triple diffusion planar type Panasonic Semiconductor
Panasonic Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche