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PDF FDMC8010 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8010 | |
| Descripción | N-Channel PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC8010
N-Channel PowerTrench® MOSFET
30 V, 75 A, 1.3 mΩ
Features
General Description
December 2011
Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for applications where ultra low rDS(on) is
required in small spaces such as High performance VRM, POL
and Oring functions.
Applications
DC - DC Buck Converters
Point of Load
High Efficiency Load Switch and Low Side Switching
Oring FET
Pin 1
Pin 1
SS SG
S
S
D
D
DDDD
Top Bottom
Power 33
www.DataSheet.co.kr
S
G
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalance Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
20
75
166
30
120
153
54
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC8010
Device
FDMC8010
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
0.0001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
www.DataSheet.co.kr
©2011 Fairchild Semiconductor Corporation
FDMC8010 Rev.C
5
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC8010.PDF ] | |
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