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Número de pieza | 2SC4209 | |
Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SC4209 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4209
2SC4209
Driver Stage Amplifier Applications
Voltage Amplifier Applications
• Complementary to 2SA1620
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
80
80
5
300
60
200
150
−55~150
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 5 mA, IB = 0
hFE (1)
(Note)
VCE = 2 V, IC = 50 mA
hFE (2)
VCE (sat)
VBE
fT
Cob
VCE = 2 V, IC = 200 mA
IC = 200 mA, IB = 10 mA
VCE = 2 V, IC = 5 mA
VCE = 10 V, IC = 10 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70~140, Y: 120~240
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
80 ⎯ ⎯
V
70 ⎯ 240
40 ⎯
⎯⎯
0.55 ⎯
⎯ 100
⎯ 10
⎯
0.5 V
0.8 V
⎯ MHz
⎯ pF
1 2007-11-01
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SC4209.PDF ] |
Número de pieza | Descripción | Fabricantes |
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