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Numéro de référence | TBB1004 | ||
Description | Twin Build in Biasing Circuit MOS FET IC | ||
Fabricant | Hitachi Semiconductor | ||
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1 Page
TBB1004
Twin Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-988H (Z)
9th. Edition
Dec. 2000
Features
• Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.
• Suitable for World Standard Tuner RF amplifier.
• Very useful for total tuner cost reduction.
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0
conditions.
• Provide mini mold packages; CMPAK-6
Outline
CMPAK-6
www.DataSheet.co.kr
Notes:
4
5
6
3
2
1
1. Drain(1)
2. Source
3. Gate-1(1)
4. Gate-1(2)
5. Gate-2
6. Drain(2)
1. Marking is “DM”.
2. TBB1004 is individual type number of HITACHI TWIN BBFET.
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 11 | ||
Télécharger | [ TBB1004 ] |
No | Description détaillée | Fabricant |
TBB1002 | Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier | HITACHI |
TBB1004 | Twin Build in Biasing Circuit MOS FET IC | Hitachi Semiconductor |
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TBB1008 | Twin Built in Biasing Circuit MOS FET IC | Renesas |
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