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PDF 2SC4207 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4207 | |
| Descripción | Silicon NPN Epitaxial Type TRANSISTOR | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC4207 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4207
2SC4207
Audio Frequency General Purpose Amplifier Applications
Unit: mm
• Small package (dual type)
• High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
• High hFE: hFE = 120~700
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• Complementary to 2SA1618
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 150 mA
Base current
IB 30 mA
Collector power dissipation
Junction temperature
Storage temperature range
PC
(Note 1)
Tj
Tstg
300
125
−55~125
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SC4207.PDF ] | |
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