DataSheetWiki


RJU36B2WDPK-M0 fiches techniques PDF

Renesas - Dual Diode Ultra Fast Recovery Diode

Numéro de référence RJU36B2WDPK-M0
Description Dual Diode Ultra Fast Recovery Diode
Fabricant Renesas 
Logo Renesas 





1 Page

No Preview Available !





RJU36B2WDPK-M0 fiche technique
RJU36B2WDPK-M0
Dual Diode
Ultra Fast Recovery Diode
Preliminary Datasheet
R07DS0668EJ0100
Rev.1.00
Mar 01, 2012
Features
Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 20 A, di/dt = 100 A/s)
Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)
Low reverse current: IR = 1 A max. (at VR = 360 V)
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
4
12 3
2, 4
13
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
Item
Maximum reverse voltage
Continuous forward current Tc = 25C
Tc = 100C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
Storage temperature
Note: Per leg/device
Electrical Characteristics
Item
Forward Voltage
Reverse current
Reverse Recovery Time
Symbol
VF
IR
trr
Min
www.DataSheet.co.kr
Symbol
VRM
IF Note
IF Note
IFSM Note
j-cd
Tj
Tstg
Typ Max
1.1 1.5
1
40
Ratings
360
20/40
10/20
80/160
2.4
150
–55 to +150
(Ta = 25°C)
Unit
V
A
A
A
C/W
C
C
(Ta = 25°C)
Unit Test conditions
V IF = 20 A
A VR = 360 V
ns IF = 20 A, di/dt = 100 A/s
R07DS0668EJ0100 Rev.1.00
Mar 01, 2012
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.net/

PagesPages 4
Télécharger [ RJU36B2WDPK-M0 ]


Fiche technique recommandé

No Description détaillée Fabricant
RJU36B2WDPK-M0 Dual Diode Ultra Fast Recovery Diode Renesas
Renesas

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche