|
|
Numéro de référence | RJP60V0DPM | ||
Description | N-Channel IGBT | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
RJP60V0DPM
600V - 22A - IGBT
Application: Inverter
Features
High breakdown-voltage
Low Collector to Emitter saturation Voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
Short circuit withstand time (6 s typ.)
Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
G
1
2
3
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
www.DataSheet.co.kr
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Preliminary Datasheet
R07DS0669EJ0100
Rev.1.00
Feb 07, 2012
C
1. Gate
2. Collector
3. Emitter
E
Ratings
600
±30
45
22
90
40
3.125
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0669EJ0100 Rev.1.00
Feb 07, 2012
Page 1 of 7
Datasheet pdf - http://www.DataSheet4U.net/
|
|||
Pages | Pages 8 | ||
Télécharger | [ RJP60V0DPM ] |
No | Description détaillée | Fabricant |
RJP60V0DPM | N-Channel IGBT | Renesas |
RJP60V0DPM-80 | IGBT | Renesas |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |