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RJP60F0DPE fiches techniques PDF

Renesas - N-Channel IGBT

Numéro de référence RJP60F0DPE
Description N-Channel IGBT
Fabricant Renesas 
Logo Renesas 





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RJP60F0DPE fiche technique
Preliminary Datasheet
RJP60F0DPE
600 V - 25 A - IGBT
High Speed Power Switching
R07DS0540EJ0100
Rev.1.00
Sep 09, 2011
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
C
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC Note1
IC Note1
ic(peak) Note1
PC
j-c
Tj
Tstg
Ratings
600
±30
50
25
100
122
1.02
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS0540EJ0100 Rev.1.00
Sep 09, 2011
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