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PDF RJP60D0DPM Data sheet ( Hoja de datos )
| Número de pieza | RJP60D0DPM | |
| Descripción | N-Channel IGBT | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RJP60D0DPM
Silicon N Channel IGBT
High Speed Power Switching
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15V, Ta = 25°C)
Gate to emitter voltage rating 30 V
Pb-free lead plating and chip bonding
Preliminary Datasheet
R07DS0088EJ0200
Rev.2.00
Nov 16, 2010
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
C
1
2
3
1. Gate
G 2. Collector
3. Emitter
www.DataSheet.co.kr
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
PC Note2
j-c Note2
Tj
Tstg
Ratings
600
±30
45
22
90
40
3.125
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/ W
°C
°C
R07DS0088EJ0200 Rev.2.00
Nov 16, 2010
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJP60D0DPM
Transfer Characteristics (Typical)
80
Ta = 25°C
60 150°C
40
20
VCE = 10 V
Pulse Test
0
0 4 8 12 16
Gate to Emitter Voltage VGE (V)
Preliminary
Thermal Impedance vs. Pulse Width
10
TC = 25°C
1
Single pulse
0.1
0.01
100 µ
1m
www.DataSheet.co.kr
10 m
100 m
1
Pulse Width PW (s)
10 100
Switching Time Test Circuit
Diode clamp/
D.U.T
L
D.U.T/
VCC
Rg Driver
Waveform
90%
Vin 10%
90%
90%
Ic
td(on)
10%
tr
ton
td(off)
toff
10%
tf
R07DS0088EJ0200 Rev.2.00
Nov 16, 2010
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJP60D0DPM.PDF ] | |
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