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2SC4203 fiches techniques PDF

Toshiba Semiconductor - Silicon Epitaxial Planar Type Transistor

Numéro de référence 2SC4203
Description Silicon Epitaxial Planar Type Transistor
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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2SC4203 fiche technique
TOSHIBA Transistor Silicon Epitaxial Planar Type
2SC4203
Video Output for High Definition VDT
High Speed Switching Applications
2SC4203
Unit: mm
· High transition frequency: fT = 400 MHz (typ.)
(VCE = 10 V, IC = 70 mA)
· Low output capacitance: Cob < 5 pF (max) (VCB = 30 V)
· High voltage: VCEO = 150 V
· High power dissipation: PC = 10 W
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulse)
Base current
Power dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
180
150
5
0.3
0.5
0.2
1.0
10
150
55 to 150
Unit
V
V
V
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7B2A
Weight: 0.36 g (typ.)
1 2002-07-23

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