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PDF RJK6024DPE Data sheet ( Hoja de datos )
| Número de pieza | RJK6024DPE | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RJK6024DPE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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RJK6024DPE
600V - 0.4A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 28 typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
www.DataSheet.co.kr
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
Pch Note2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0424EJ0200
Rev.2.00
Feb 27, 2012
D
1. Gate
2. Drain
3. Source
4. Drain
S
Ratings
600
30
0.4
0.6
0.4
0.6
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
C/W
C
C
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RJK6024DPE
10
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
Preliminary
D=1
1
0.5
0.2
0.1
0.05
0.1 1 shot pulse
0.02 0.01
θch – c (t) = γ s (t) • θch – c
θch – c = 6.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
10μ 100μ 1m 10m 100m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 300 V
Waveform
90%
Vin
Vout
www.DataSheet.co.kr
10%
10%
90%
td(on)
tr
90%
td(off)
10%
tf
R07DS0424EJ0200 Rev.2.00
Feb 27, 2012
Page 5 of 6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK6024DPE.PDF ] | |
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