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RJK6006DPP-E0 fiches techniques PDF

Renesas - N-Channel Power MOSFET / Transistor

Numéro de référence RJK6006DPP-E0
Description N-Channel Power MOSFET / Transistor
Fabricant Renesas 
Logo Renesas 





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RJK6006DPP-E0 fiche technique
RJK6006DPP-E0
600V - 5A - MOS FET
High Speed Power Switching
Features
Low on-state resistance
RDS(on) = 1.4 typ. (at ID = 2.5 A, VGS = 10 V, Ta = 25C)
High speed switching
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
G
1
23
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
4. Limited by maximum safe operation area
Symbol
VDSS
VGSS
ID Note4
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAPNote3
EARNote3
Pch Note 2
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS0610EJ0100
Rev.1.00
Mar 16, 2012
D
1. Gate
2. Drain
3. Source
S
Value
600
30
5
15
5
15
5
1.36
29
4.31
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0610EJ0100 Rev.1.00
Mar 16, 2012
Page 1 of 6
Datasheet pdf - http://www.DataSheet4U.net/

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