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Numéro de référence | RJK1555DPA | ||
Description | N-Channel Power MOSFET / Transistor | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
RJK1555DPA
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G1783-0100
Rev.1.00
Apr 02, 2009
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
www.DataSheet.co.kr
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
25
50
25
50
22
36.3
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1783-0100 Rev.1.00 Apr 02, 2009
Page 1 of 3
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 4 | ||
Télécharger | [ RJK1555DPA ] |
No | Description détaillée | Fabricant |
RJK1555DPA | N-Channel Power MOSFET / Transistor | Renesas |
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