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PDF RJK1535DPJ Data sheet ( Hoja de datos )

Número de pieza RJK1535DPJ
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJK1535DPJ Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0479-0300
Rev.3.00
Jun 30, 2010
Features
Low on-resistance
Low leakage current
High speed switching
Outline
LDPAK
D
G
S
4 44
1
2
3
1
2
1
2
RJK1535DPE
3
3 RJK1535DPF
RJK1535DPJ
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Symbol
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VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Ratings
150
±30
40
100
40
100
30
67.5
100
1.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G0479-0300 Rev.3.00
Jun 30, 2010
Page 1 of 7
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RJK1535DPJ pdf
RJK1535DPJ, RJK1535DPE, RJK1535DPF
Reverse Drain Current vs.
Source to Drain Voltage
50
40
30
Preliminary
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
ID = 10 mA
4
1 mA
3
20
10 V
10 5 V
VGS = 0 V
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
2 0.1 mA
1
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
3
1
D=1
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
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θch – c(t) = γs (t) θch – c
θch – c = 1.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
V DD
= 75 V
REJ03G0479-0300 Rev.3.00
Jun 30, 2010
Waveform
Vin 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
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