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RJK1054DPB fiches techniques PDF

Renesas - N-Channel Power MOSFET / Transistor

Numéro de référence RJK1054DPB
Description N-Channel Power MOSFET / Transistor
Fabricant Renesas 
Logo Renesas 





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RJK1054DPB fiche technique
RJK1054DPB
Silicon N Channel Power MOS FET
Power Switching
Preliminary Datasheet
R07DS0093EJ0200
(Previous: REJ03G1886-0100)
Rev.2.00
Aug 17, 2010
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 17 mtyp. (at VGS = 10 V)
Outline
Pb-free
Halogen-free
High density mounting
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
5
D
4 1, 2, 3 Source
G 4 Gate
5 Drain
SSS
123
Absolute Maximum Ratings
www.DataSheet.co.kr
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)Note1
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
IDR
IAP Note 2
EAR Note 2
Pch Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25C, Rg 50
3. Tc = 25C
Ratings
100
20
20
80
20
20
4.0
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0093EJ0200 Rev.2.00
Aug 17, 2010
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