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PDF 2SC4152 Data sheet ( Hoja de datos )

Número de pieza 2SC4152
Descripción Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



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No Preview Available ! 2SC4152 Hoja de datos, Descripción, Manual

Power Transistors
2SC4152
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCER
VCEO
VEBO
ICP
IC
PC
1400
1400
700
5
1.0
0.3
20
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
ICBO
IEBO
VCER
VCEO
VCB = 1100V, IE = 0
VEB = 4V, IC = 0
IC = 1mA, RBE = 100
IC = 1mA, IB = 0
1400
700
10 µA
10 µA
V
V
Emitter to base voltage
VEBO
IE = 1mA, IC = 0
5
V
Forward current transfer ratio
hFE
VCE = 5V, IC = 30mA
10 40
Collector to emitter saturation voltage VCE(sat)
IC = 60mA, IB = 6mA
2V
Base to emitter saturation voltage VBE(sat)
IC = 60mA, IB = 6mA
2V
Transition frequency
fT VCE = 10V, IC = 30mA, f = 1MHz
12 MHz
Collector output capacitance
Turn-on time
Storage time
Fall time
Cob
ton
tstg
tf
VCB = 100V, IE = 0, f = 1MHz
IC = 0.15A, IB1 = 15mA, IB2 = –30mA,
VCC = 250V
6 pF
2 µs
3 µs
1 µs
1

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