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Winsemi - Silicon N-Channel MOSFET

Numéro de référence WFU1N60
Description Silicon N-Channel MOSFET
Fabricant Winsemi 
Logo Winsemi 





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WFU1N60 fiche technique
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFU1N60
Silicon N-Channel MOSFET
Features
1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V
Ultra-low Gate Charge(Typical 9.1nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged
avalanche characteristics. This devices is specially well suited for high
efficiency switch mode power supply , electronic lamp ballasts based
on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Maximum lead Temperature for soldering purposes
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
1.3
0.84
5.0
±30
78
3.9
5.5
32
0.24
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 3.9 /W
0.5 -
- /W
- - 110 /W
Rev.A Dec.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

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