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Numéro de référence | WFU1N60 | ||
Description | Silicon N-Channel MOSFET | ||
Fabricant | Winsemi | ||
Logo | |||
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
WFU1N60
Silicon N-Channel MOSFET
Features
� 1.3A,600V,RDS(on)(Max 8.5Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 9.1nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged
avalanche characteristics. This devices is specially well suited for high
efficiency switch mode power supply , electronic lamp ballasts based
on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Maximum lead Temperature for soldering purposes
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
1.3
0.84
5.0
±30
78
3.9
5.5
32
0.24
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 3.9 ℃/W
0.5 -
- ℃/W
- - 110 ℃/W
Rev.A Dec.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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Pages | Pages 7 | ||
Télécharger | [ WFU1N60 ] |
No | Description détaillée | Fabricant |
WFU1N60 | Silicon N-Channel MOSFET | Winsemi |
WFU1N60C | Power MOSFET ( Transistor ) | Winsemi |
WFU1N60N | Silicon N-Channel MOSFET | Winsemi |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
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