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Numéro de référence | WFP3205T | ||
Description | Silicon N-Channel MOSFET | ||
Fabricant | Winsemi | ||
Logo | |||
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
Features
■ 109A,60V, RDS(on)(Max 8mΩ)@VGS=10V
■ Ultra-low Gate charge(Typical 50nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
WFP3205T
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe,DMOS technology. This latest technology has
beenespecially designed to minimize on-state resistance ,have
a lowgate charge with superior switching performance ,and
ruggedavalanche characteristics.This Power MOSFET is well
suited for synchronous DC-DC Converters and power
Management inportable and battery operated products.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note1)
(Note3)
Value
60
109
80
390
±20
20
5.0
150
1.0
-55~150
300
Units
V
A
A
A
V
mJ
V/ ns
W
W/℃
℃
℃
Value
Min Typ Max
- - 1.0
- 0.5 -
- - 62
Units
℃/W
℃/W
℃/W
Rev.A Jun.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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Pages | Pages 7 | ||
Télécharger | [ WFP3205T ] |
No | Description détaillée | Fabricant |
WFP3205 | Silicon N-Channel MOSFET | Winsemi |
WFP3205T | Silicon N-Channel MOSFET | Winsemi |
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