|
|
Numéro de référence | 2SC4094 | ||
Description | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | ||
Fabricant | NEC | ||
Logo | |||
1 Page
DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
PACKAGE DIMENSIONS
(Units: mm)
2.8
+0.2
−0.3
1.5
+0.2
−0.1
FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
• S21e2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
10
Emitter to Base Voltage
VEBO
1.5
Collector Current
IC 65
Total Power Dissipation
PT
200
Junction Temperature
Storage Temperature
Tj 150
Tstg 65 to +150
V
V
V
mA
mW
C
C
5° 5°
5° 5°
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
1.0 A VCB = 10 V, IE = 0
1.0 A VEB = 1 V, IC = 0
DC Current Gain
hFE 50
250 VCE = 8V, IC = 20 mA
Gain Bandwidth Product
fT
9 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Feed-Back Capacitance
Insertion Power Gain
Cre 0.25 0.8
S21e2
13
15
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
17
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.2 2.0 dB VCE = 8 V, IC = 7 mA, f = 1.0 GHz
hFE Classification
Class
R36/RCF *
R37/RCG *
R38/RCH *
Marking
R36
R37
R38
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
© 1987
|
|||
Pages | Pages 8 | ||
Télécharger | [ 2SC4094 ] |
No | Description détaillée | Fabricant |
2SC4092 | HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | NEC |
2SC4093 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | NEC |
2SC4093-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | NEC |
2SC4093-T2 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | NEC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |