DataSheetWiki


2SC3997 fiches techniques PDF

Sanyo Semicon Device - Very High-Definition Color Display Horizontal Deflection Output Applications

Numéro de référence 2SC3997
Description Very High-Definition Color Display Horizontal Deflection Output Applications
Fabricant Sanyo Semicon Device 
Logo Sanyo Semicon Device 





1 Page

No Preview Available !





2SC3997 fiche technique
Ordering number:ENN2771
NPN Triple Diffused Planar Silicon Transistor
2SC3997
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2048B
[2SC3997]
20.0 3.3
5.0
2.0
3.4
1.2
0.6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Storage Temperature
www.DataSheet4U.com
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sustain Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
Fall Time
ICES
VCEO(sus)
IEBO
ICBO
hFE1
hFE2
VCE(sat)
VBE(sat)
tstg
tf
VCE=1500V
IC=100mA, IB=0
VEB=4V, IC=0
VCB=800V, IE=0
VCE=5V, IC=1.0A
VCE=5V, IC=16A
IC=16A, IB=4A
IC=16A, IB=4A
IC=12A, IB1=2.4A, IB2=4.8A
IC=12A, IB1=2.4A, IB2=4.8A
1 23
5.45 5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PBL
Ratings
1500
800
6
20
40
250
150
55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
800
8
4
max
1.0
1.0
10
30
8
5
1.5
3.0
0.2
Unit
mA
V
mA
µA
V
V
µs
µs
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82903TN (KT)/D0198HA (KT)/N158MO, TS No.2771–1/3

PagesPages 3
Télécharger [ 2SC3997 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SC3990 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC3990 Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor
2SC3991 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device
Sanyo Semicon Device
2SC3991 Silicon NPM Power Transistor Inchange Semiconductor
Inchange Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche