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Panasonic Semiconductor - Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Numéro de référence 2SC3982A
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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2SC3982A fiche technique
Power Transistors
2SC3982, 2SC3982A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SC3982
base voltage 2SC3982A
Collector to 2SC3982
emitter voltage 2SC3982A
VCBO
VCES
900
1000
900
1000
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VCEO
VEBO
ICP
IC
IB
PC
800
7
15
10
5
150
3.5
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SC3982
current
2SC3982A
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
IEBO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 900V, IE = 0
VCB = 1000V, IE = 0
VEB = 7V, IC = 0
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 4A
IC = 4A, IB = 0.8A
IC = 4A, IB = 0.8A
VCE = 5V, IC = 1A, f = 1MHz
IC = 4A, IB1 = 0.8A, IB2 = –1.6A,
VCC = 250V
20.0±0.5
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
1.5
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
1.5
2.7±0.3
0.6±0.2
123
1:Base
2:Collector
3:Emitter
TOP–3L Package
min typ max Unit
50
µA
50
50 µA
800 V
8
6
1.5 V
1.5 V
15 MHz
0.7 µs
3.0 µs
0.3 µs
1

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