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PDF 1N3611 Data sheet ( Hoja de datos )

Número de pieza 1N3611
Descripción (1N3611 - 1N3957) Standard Recovery Rectifier Diode
Fabricantes Semtech Corporation 
Logotipo Semtech Corporation Logotipo

1N3611 datasheet


1. - 1A, 200V, Silicon Rectifier






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POWER DISCRETES
Description
Quick reference data
VR = 200 - 1000 V
IO = 1.0A
trr = 2µS
V = 1.1V
F
1N3611, 1N3612, 1N3613,
1N3614, 1N3957
Axial Leaded Hermetically Sealed
Standard Recovery Rectifier Diode
Features
‹ Low reverse leakage current
‹ Hermetically sealed in Metoxilite fused metal oxide
‹ Good thermal shock resistance
‹ Low forward voltage drop
‹ Avalanche capability
These products can be supplied as JANTX levels.
Electrical Specifications
Electrical specifications @ TA = 25°C unless otherwise specified.
Types
VRWM
VF
IO
IFSM
IR
At: T J =
25°C
IO = 1A
At: TA =
+100°C
(1)(2)
At: TA =
+150°C
(1)(2)
TA = +25°C
IO = 1 A dc
tp = 8.0ms
VRWM,
TJ = 25°C
1N3611
1N3612
1N3613
1N3614
1N3957
V(pk)
200
400
600
800
1000
V
1.1
1.1
1.1
1.1
1.1
A dc
1
1
1
1
1
mA dc
300
300
300
300
300
A(pk)
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30
30
30
30
30
µA
0.5
0.5
0.5
0.5
0.5
TRR
TSTG and TJ
LR=.θ3J7L 5
inch
(9.53mm)
0.5A IO to
1.0A IRM
recover to
0.25A IRM
(REC)
µS
°C
°C/W
2
-65 to +175
38
2
-65 to +175
38
2
-65 to +175
38
2
-65 to +175
38
2
-65 to +175
38
Notes:
(1) From IO rating is independent of heat sinking, special mounting, or leads of the device.
(2) Derate linearly at 13.3mA between TA = +100°C and TA = +175°C
Revision: June 19, 2006
1
www.semtech.com
Datasheet pdf - http://www.DataSheet4U.net/

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