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Numéro de référence | 2SC5480 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5480
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output stage
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
www.DataSheet.co.kr
V
VEBO
Emitter-Base Voltage
5V
IC(peak) Collector Current-Peak
14 A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
28 A
50 W
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 2 | ||
Télécharger | [ 2SC5480 ] |
No | Description détaillée | Fabricant |
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