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2SC5480 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 2SC5480
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SC5480 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5480
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output stage
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1500
www.DataSheet.co.kr
V
VEBO
Emitter-Base Voltage
5V
IC(peak) Collector Current-Peak
14 A
IC(surge) Collector Current-Surge
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
28 A
50 W
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/

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