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BD63873EFV fiches techniques PDF

ROHM Semiconductor - Silicon monolithic integrated circuits

Numéro de référence BD63873EFV
Description Silicon monolithic integrated circuits
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BD63873EFV fiche technique
STRUCTURE
PRODUCT SERIES
TYPE
FUNCTION
Silicon monolithic integrated circuits
Bipolar stepping motor driver
BD63873EFV
PWM constant current controllable two H bridge driver
Built-in translator circuit for CLK-IN control
Full, Half, and Quarter step modes
Mix decay control
1/4
Absolute maximum ratings(Ta=25)
Item
Symbol
Limit
Unit
Supply voltage
Power dissipation
VCC1,2
Pd
-0.2+36.0
1.451
4.702
V
W
W
Input voltage for control pin
VIN
-0.2+5.5
V
RNF maximum voltage
VRNF
0.7
V
Maximum output current
IOUT
1.03
A/phase
Maximum output current(peak)4 IOUTPEAK
1.53
A/phase
Operating temperature range
Topr
-25+85
Storage temperature range
Tstg
-55+150
Junction temperature
Tjmax
+150
1 70mm×70mm×1.6mm glass epoxy board. Derating in done at 11.6mW/for operating above Ta=25.
2 4-layer recommended board. Derating in done at 37.6mW/for operating above Ta=25.
3 Do not, however exceed Pd, ASO and Tjmax=150.
www.DataSheet.co.kr
4 Pulse width tw1ms, duty 20%.
Recommended operating conditions (Ta=-25+85)
Item
Symbol
Min.
Supply voltage
VCC1,2
19
Output current
IOUT
5 Do not, however exceed Pd, ASO.
-
Typ.
24
0.5
This product isn’t designed for protection against radioactive rays.
Max.
28
0.75
Unit
V
A/phase
Status of this document
The Japanese version of this document is the formal specification.
A customer may use this translation version only for a reference to help reading the formal version.
If there are any differences in translation version of this document, formal version takes priority.
.
Rev. A
Datasheet pdf - http://www.DataSheet4U.net/

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