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Numéro de référence | BD63860EFV | ||
Description | Silicon monolithic integrated circuits | ||
Fabricant | ROHM Semiconductor | ||
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1 Page
STRUCTURE
PRODUCT SERIES
TYPE
FUNCTION
Silicon monolithic integrated circuits
Bipolar stepping motor driver
BD63860EFV
・PWM constant current controllable two H bridge driver
・Built-in translator circuit for CLK-IN control
・Full, Half, Quarter, and Eighth step modes
・Mixed decay control
1/4
○Absolute maximum ratings(Ta=25℃)
Item
Symbol
Limit
Unit
Supply voltage
Power dissipation
Input voltage for control pin
VCC1,2
Pd
VIN
-0.2~+36.0
1.45※1
4.70※2
-0.2~+7.0
V
W
W
V
RNF maximum voltage
VRNF
1.0
V
Maximum output current
IOUT
2.5※3
A/phase
Operating temperature range
Topr
-25~+85
℃
Storage temperature range
Tstg
-55~+150
℃
Junction temperature
Tjmax
+150
℃
※1 70mm×70mm×1.6mm glass epoxy board. Derating in done at 11.6mW/℃ for operating above Ta=25℃.
※2 4-layer recommended board. Derating in done at 37.6mW/℃ for operating above Ta=25℃.
※3 Do not, however exceed Pd, ASO and Tjmax=150℃.
www.DataSheet.co.kr
○Recommended operating conditions (Ta=-25~+85℃)
Item
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC1,2
Output current
IOUT
※4 Do not, however exceed Pd, ASO.
16
-
24 28 V
1.5 1.7※4 A/phase
This product isn’t designed for protection against radioactive rays.
Status of this document
The Japanese version of this document is the formal specification.
A customer may use this translation version only for a reference to help reading the formal version.
If there are any differences in translation version of this document, formal version takes priority.
Rev. A
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 5 | ||
Télécharger | [ BD63860EFV ] |
No | Description détaillée | Fabricant |
BD63860EFV | Silicon monolithic integrated circuits | ROHM Semiconductor |
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