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BD63860EFV fiches techniques PDF

ROHM Semiconductor - Silicon monolithic integrated circuits

Numéro de référence BD63860EFV
Description Silicon monolithic integrated circuits
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BD63860EFV fiche technique
STRUCTURE
PRODUCT SERIES
TYPE
FUNCTION
Silicon monolithic integrated circuits
Bipolar stepping motor driver
BD63860EFV
PWM constant current controllable two H bridge driver
Built-in translator circuit for CLK-IN control
Full, Half, Quarter, and Eighth step modes
Mixed decay control
1/4
Absolute maximum ratings(Ta=25)
Item
Symbol
Limit
Unit
Supply voltage
Power dissipation
Input voltage for control pin
VCC1,2
Pd
VIN
-0.2+36.0
1.451
4.702
-0.2+7.0
V
W
W
V
RNF maximum voltage
VRNF
1.0
V
Maximum output current
IOUT
2.53
A/phase
Operating temperature range
Topr
-25+85
Storage temperature range
Tstg
-55+150
Junction temperature
Tjmax
+150
1 70mm×70mm×1.6mm glass epoxy board. Derating in done at 11.6mW/for operating above Ta=25.
2 4-layer recommended board. Derating in done at 37.6mW/for operating above Ta=25.
3 Do not, however exceed Pd, ASO and Tjmax=150.
www.DataSheet.co.kr
Recommended operating conditions (Ta=-25+85)
Item
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VCC1,2
Output current
IOUT
4 Do not, however exceed Pd, ASO.
16
-
24 28 V
1.5 1.74 A/phase
This product isn’t designed for protection against radioactive rays.
Status of this document
The Japanese version of this document is the formal specification.
A customer may use this translation version only for a reference to help reading the formal version.
If there are any differences in translation version of this document, formal version takes priority.
Rev. A
Datasheet pdf - http://www.DataSheet4U.net/

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