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PDF 2SC3939 Data sheet ( Hoja de datos )
| Número de pieza | 2SC3939 | |
| Descripción | Silicon NPN epitaxial planer type(For low-frequency driver amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC3939
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA1533
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
q Allowing supply with the radial taping.
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
80
80
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1.27
0.45
+0.15
–0.1
0.45
+0.15
–0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = 20V, IE = 0
0.1 µA
IC = 10µA, IE = 0
80
V
IC = 100µA, IB = 0
80
V
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 150mA*2 130 330
VCE = 5V, IC = 500mA*2
50 100
IC = 300mA, IB = 30mA*2
0.2 0.4
V
IC = 300mA, IB = 30mA*2
0.85 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz 120 MHz
VCB = 10V, IE = 0, f = 1MHz
11 20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
R
S
hFE1 130 ~ 220 185 ~ 330
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SC3939.PDF ] | |
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