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PDF RCD060N25 Data sheet ( Hoja de datos )
| Número de pieza | RCD060N25 | |
| Descripción | Drive Nch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
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Data Sheet
10V Drive Nch MOSFET
RCD060N25
Structure
Silicon N-channel MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
<SOT-428>
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1) (2)
0.65
(3) 2.3
0.5
1.0
Application
Switching
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RCD060N25
Taping
TL
2500
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
VGSS
30
ID *3
6
IDP *1,3
IS
24
6
ISP *1
24
IAS *2
3
EAS *2
2.62
PD *4
20
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Unit
V
V
A
A
A
A
A
mJ
W
C
C
Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)*
* TC=25°C
* Limited only by maximum channel temperature allowed.
Limits
6.25
Unit
C / W
Inner circuit
∗1
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
RCD060N25
1000
Fig.13 Reverse Recovery Time vs. Source Current
Ta=25°C
Vgs=0V
di/dt=100A/us
Pulsed
100
10
0
1
Source Current : IS [A]
10
www.DataSheet.co.kr
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RCD060N25.PDF ] | |
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