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RBQ20T65A fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBQ20T65A
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBQ20T65A fiche technique
Data Sheet
Schottky Barrier Diode
RBQ20T65A
lApplications
General rectification
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
lConstruction
Silicon epitaxial planer
   lDimensions (Unit : mm)
10.0±0.3
    0.1
4.5±0.3
    0.1
2.8±0.2
    0.1
1.2
1.3
0.8
(1) (2) (3)
ROHM : TO220FN
Manufacture Date
0.7±0.1
0.05
2.6±0.5
lStructure
www.DataSheet.co.kr
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
VRM
VR
Average rectified forward current (*1)
Forward current surge peak (60Hz1cyc)
Junction temperature
Io
IFSM
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
65
65
20
100
150
-40 to +150
Unit
V
V
A
A
°C
°C
lElectrical characteristics (Tj=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - - 0.69
IR - - 300
Unit Conditions
V IF=10A
mA VR=65V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

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