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ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBQ10T65A
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBQ10T65A fiche technique
Data Sheet
Schottky Barrier Diode
RBQ10T65A
lApplications
General rectification
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
lConstruction
Silicon epitaxial planer
lDimensions (Unit : mm)
10.0±0.3
    0.1
lStructure
4.5±0.3
    0.1
2.8±0.2
    0.1
1.2
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
ROHM : TO220FN
Manufacture Date
2.6±0.5
www.DataSheet.co.kr
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak 60Hz1cyc
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
65
65
10
50
150
-40 to +150
Unit
V
V
A
A
C
C
lElectrical characteristics (Tj=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF
-
- 0.69
V IF=5A
IR
-
- 150
mA VR=65V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

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