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RBE1VA20A fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RBE1VA20A
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RBE1VA20A fiche technique
Data Sheet
Schottky Barrier Diode
RBE1VA20A
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.17±0.1
   0.05
Features
1)Small mold type (TUMD2)
2)High reliability
Land size figure (Unit : mm)
1.1
TUMD2
0.8±0.05
ROHM : TUMD2
0.6±0.2
    0.1
dot (year week factory)
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
      0
0.25±0.05
www.DataSheet.co.kr
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak (60Hz1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
1.43±0.05
4.0±0.1
φ1.0±0.2
     0
Limits
30
20
1
3
125
40 to 125
Unit
V
V
A
A
C
C
0.9±0.08
Electrical characteristics (Tj=25C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF -
- 0.53
Reverse current
IR - - 200
Unit Conditions
V IF=1A
μA VR=20V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

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