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RB706F-40 fiches techniques PDF

TRANSYS - SCHOTTKY BARRIER DIODE

Numéro de référence RB706F-40
Description SCHOTTKY BARRIER DIODE
Fabricant TRANSYS 
Logo TRANSYS 





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RB706F-40 fiche technique
RB706F-40 SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25)
Collector current
IF: 30 mA
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
CIRCUIT:
www.DataSheet.co.kr
1
3
2
SOT-323
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
MARKING: 3J
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=10V
MIN MAX
40
1
Forward voltage
Diode capacitance
VF IF=1mA
CD VR=1V, f=1MHz
0.37
5
UNIT
V
µA
V
pF
Datasheet pdf - http://www.DataSheet4U.net/

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