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Numéro de référence | RB706F-40 | ||
Description | SCHOTTKY BARRIER DIODE | ||
Fabricant | TRANSYS | ||
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1 Page
RB706F-40 SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IF: 30 mA
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
CIRCUIT:
www.DataSheet.co.kr
1
3
2
SOT-323
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
MARKING: 3J
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol
V(BR)
IR
Test conditions
IR= 100µA
VR=10V
MIN MAX
40
1
Forward voltage
Diode capacitance
VF IF=1mA
CD VR=1V, f=1MHz
0.37
5
UNIT
V
µA
V
pF
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 1 | ||
Télécharger | [ RB706F-40 ] |
No | Description détaillée | Fabricant |
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