|
|
Numéro de référence | RB501V-40 | ||
Description | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | ||
Fabricant | SEMTECH ELECTRONICS | ||
Logo | |||
1 Page
RB501V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• High reliability
Applications
• Low current rectification
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
S7
Top View
Marking Code: "S7"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
www.DataSheet.co.kr
VRM 45
VR 40
IO 0.1
IFSM
1
Tj 125
Ts - 40 to + 125
V
V
A
A
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
at IF = 10 mA
Reverse Current
at VR = 10 V
Capacitance Between Terminals
at VR = 10 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol
VF
VF
IR
CT
Typ.
-
-
-
6
Max.
0.55
0.34
30
-
Unit
V
V
µA
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
Datasheet pdf - http://www.DataSheet4U.net/
|
|||
Pages | Pages 3 | ||
Télécharger | [ RB501V-40 ] |
No | Description détaillée | Fabricant |
RB501V-40 | SCHOTTKY BARRIER DIODE | JCET |
RB501V-40 | Schottky barrier diode | ROHM Semiconductor |
RB501V-40 | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE | SEMTECH ELECTRONICS |
RB501V-40 | Schottky barrier diode | Guangdong Kexin |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |