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RB501V-40 fiches techniques PDF

SEMTECH ELECTRONICS - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Numéro de référence RB501V-40
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Fabricant SEMTECH ELECTRONICS 
Logo SEMTECH ELECTRONICS 





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RB501V-40 fiche technique
RB501V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• High reliability
Applications
• Low current rectification
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
12
S7
Top View
Marking Code: "S7"
Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
Reverse Voltage
Mean Rectifying Current
Peak Forward Surge Current (60 Hz for 1 Cyc.)
Junction Temperature
Storage Temperature Range
www.DataSheet.co.kr
VRM 45
VR 40
IO 0.1
IFSM
1
Tj 125
Ts - 40 to + 125
V
V
A
A
OC
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 100 mA
at IF = 10 mA
Reverse Current
at VR = 10 V
Capacitance Between Terminals
at VR = 10 V, f = 1 MHz
Note: ESD sensitive product handling required.
Symbol
VF
VF
IR
CT
Typ.
-
-
-
6
Max.
0.55
0.34
30
-
Unit
V
V
µA
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006
Datasheet pdf - http://www.DataSheet4U.net/

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