(PDF) RB161L-40 Datasheet - SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Número de pieza	RB161L-40
Descripción	SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Fabricantes	SEMTECH
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No Preview Available ! RB161L-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY RECTIFICATION AND SWITCHING POWER SUPPLY Features • Compact power mold type • Ultra low VF • VRM = 40 V guaranteed Maximum Ratings and Electrical Characteristics Ratings at 25OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, For capacitive load, derate by 20% Parameter Symbol Value Unit Peak Reverse Voltage www.DataSheet.co.kr VRM 40 V DC Blocking Voltage Mean Rectifying Current 1) VR 20 IO 1 V A Peak Forward Surge Current IFSM 70 A Maximum Forward Voltage at IF = 1 A VF 0.4 V Maximum Reverse Current at VR = 20V IR 1 mA Operating Junction Temperature Range TJ 125 OC Storage Temperature Range 1) When mounting on PCB TS - 40 to + 125 OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 14/04/2008 Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF RB161L-40 Data sheet ( Hoja de datos )