DataSheetWiki


RB160SS-40 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB160SS-40
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





1 Page

No Preview Available !





RB160SS-40 fiche technique
Schottky Barrier Diode
RB160SS-40
lApplications
Small current rectification
lDimensions (Unit : mm)
lFeatures
1)Small power mold type (KMD2)
2)High reliability
3)Low IR
0.8±0.05
00.03
0.6±0.03
lConstruction
Silicon epitaxial planer
ROHM : KMD2
JEDEC :-
JEITA : -
dot (year week factory)
0.7±0.05
lTaping dimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
0.8
KMD2
lStructure
www.DataSheet.co.kr
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
40
40
1
Forward current surge peak(60Hz1cyc.)
Junction temperature
IFSM
Tj
5
150
Storage temperature
Tstg -40 to +150
(*1) On the Glass epoxy substrate , 180°Half Sine wave
lElectrical characteristics (Ta=25C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Min.
-
-
Typ. Max.
0.50 0.55
3.00 50.00
Unit
V
V
A
A
C
C
Unit
V
μA
Conditions
IF=0.7A
VR=40V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

PagesPages 5
Télécharger [ RB160SS-40 ]


Fiche technique recommandé

No Description détaillée Fabricant
RB160SS-40 Schottky Barrier Diode ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche