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Numéro de référence | RB160SS-40 | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
Logo | |||
1 Page
Schottky Barrier Diode
RB160SS-40
lApplications
Small current rectification
lDimensions (Unit : mm)
lFeatures
1)Small power mold type (KMD2)
2)High reliability
3)Low IR
0.8±0.05
0~0.03
0.6±0.03
lConstruction
Silicon epitaxial planer
ROHM : KMD2
JEDEC :-
JEITA : -
dot (year week factory)
0.7±0.05
lTaping dimensions (Unit : mm)
Data Sheet
lLand size figure (Unit : mm)
0.8
KMD2
lStructure
www.DataSheet.co.kr
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
40
40
1
Forward current surge peak(60Hz・1cyc.)
Junction temperature
IFSM
Tj
5
150
Storage temperature
Tstg -40 to +150
(*1) On the Glass epoxy substrate , 180°Half Sine wave
lElectrical characteristics (Ta=25C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Min.
-
-
Typ. Max.
0.50 0.55
3.00 50.00
Unit
V
V
A
A
C
C
Unit
V
μA
Conditions
IF=0.7A
VR=40V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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Pages | Pages 5 | ||
Télécharger | [ RB160SS-40 ] |
No | Description détaillée | Fabricant |
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