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PDF RB061US-30 Data sheet ( Hoja de datos )
| Número de pieza | RB061US-30 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RB061US-30
Applications
General rectification
Dimensions (Unit : mm)
Features
1)Small power mold type. (TSMD8)
2)Low VF
3)High reliability
Structure
Silicon epitaxial planer
●
ROHM : TSMD8
Manufacture Date
● 1pin mark
Taping dimensions (Unit : mm)
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Data Sheet
Land size figure (Unit : mm)
TSMD8
Structure (8）(7) (6) (5)
（1）（2（）3）（4）
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz・1cyc) (*1)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180° Half sine wave
Limits
30
30
2
8
125
- 40 to +125
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
Capacitance between terminal
VF1
VF2
IR
Ct
Reverse recovery time
trr
Min.
-
-
-
-
-
Typ.
0.30
0.35
280
80
-
Max.
0.35
0.40
900
-
20
Unit
V
V
A
A
°C
°C
Unit Conditions
V IF=1.0A
V IF=2.0A
μA VR=15V
pF VR=20V, f=1MHz
ns IF=0.5A, IR=1A, Irr=0.25*IR
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.09 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
Notes
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
Datasheet pdf - http://www.DataSheet4U.net/
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| PDF Descargar | [ Datasheet RB061US-30.PDF ] | |
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