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RAF040P01 fiches techniques PDF

ROHM Semiconductor - Drive Pch MOSFET

Numéro de référence RAF040P01
Description Drive Pch MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RAF040P01 fiche technique
Data Sheet
1.5V Drive Pch MOSFET
RAF040P01
Structure
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Low voltage drive(1.5V drive).
3) Small surface mount package(TUMT3).
Application
Switching
Dimensions (Unit : mm)
TUMT3
Abbreviated symbol : SF
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
RAF040P01
Taping
TCL
3000
www.DataSheet.co.kr
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
12
VGSS
0to8
ID 4
IDP *1
IS
16
0.6
ISP *1
16
PD *2
0.8
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Unit
V
V
A
A
A
A
W
C
C
Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)*
Limits
156
Unit
C / W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/

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