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ROHM Semiconductor - Nch 800V 8A Power MOSFET

Numéro de référence R8008ANX
Description Nch 800V 8A Power MOSFET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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R8008ANX fiche technique
R8008ANX
  Nch 800V 8A Power MOSFET
   Datasheet
VDSS
800V
lOutline
 
RDS(on)(Max.)
1.03Ω
ID
±8A
TO-220FM
PD
66W
 
      
lFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed
  to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lInner circuit
lPackaging specifications
Packing
Bulk
Reel size (mm)
-
lApplication
Switching Power Supply
Tape width (mm)
Type
Basic ordering unit (pcs)
-
500
Taping code
-
Marking
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
R8008ANX
Unit
Drain - Source voltage
VDSS
800 V
Continuous drain current
TC = 25°C
TC = 100°C
ID*1
ID*1
±8 A
±3.9 A
Pulsed drain current
IDP*2 ±32 A
Gate - Source voltage
VGSS
±30 V
Avalanche current, single pulse
IAS*3 4 A
Avalanche energy, single pulse
EAS*3
4.2 mJ
Avalanche energy, repetitive
EAR*4
3.3 mJ
Power dissipation (Tc = 25°C)
PD 66 W
Junction temperature
Tj 150
Operating junction and storage temperature range
Tstg
-55 to +150
Reverse diode dv/dt
dv/dt 15 V/ns
                                                                                        
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/13
20160324 - Rev.002    

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